500
300 TJ = 150°C
200
25°C
100
70
– 55°C
50
30
20
VCE = 1 V
VCE = 2 V
10
7
5
0.04 0.06 0.1
0.2
0.4 0.6 1
2
4
IC, COLLECTOR CURRENT (AMP)
Figure 4. DC Current Gain
1.4
TJ = 25°C
1.2
MJD243
1
0.8 VBE(sat) @ IC/IB = 10
0.6 VBE @ VCE = 1 V
0.4
0.2
VCE(sat)
IC/IB = 10
5
0
0.04 0.06 0.1 0.2
0.4 0.6 1
2
4
IC, COLLECTOR CURRENT (AMP)
Figure 5. “On” Voltages
+ 2.5
+ 2 *APPLIES FOR IC/IB ≤ hFE/3
+ 1.5
+1
+ 0.5 ∗θVC FOR VCE(sat)
0
– 0.5
25°C to 150°C
– 55°C to 25°C
–1
– 1.5
– 2 θVB FOR VBE
25°C to 150°C
– 55°C to 25°C
– 2.5
0.04 0.06 0.1
0.2
0.4 0.6 1
2
4
IC, COLLECTOR CURRENT (AMP)
VCC
+ 30 V
+11 V
25 µs
0
RB
RC
SCOPE
–9 V
tr, tf ≤ 10 ns
51
D1
DUTY CYCLE = 1%
–4 V
RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1 MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE IB ≈ 100 mA
FOR PNP TEST CIRCUIT,
MSD6100 USED BELOW IB ≈ 100 mA REVERSE ALL POLARITIES
Figure 6. Temperature Coefficients
Figure 7. Switching Time Test Circuit
500
300
TJ = 25°C
200
VCC = 30 V
IC/IB = 10
100
70
50
tr
30
20
td @ VBE(off) = 5 V
10
7
5
0.04 0.06 0.1
0.2
0.4 0.6 1
2
4
IC, COLLECTOR CURRENT (AMP)
Figure 8. Turn–On Time
2000
TJ = 25°C
1000
VCC = 30 V
700
IC/IB = 10
500
IB1 = IB2
ts
300
200
100
70
50
tf
30
20
0.04 0.06 0.1
0.2
0.4 0.6 1
2
4
IC, COLLECTOR CURRENT (AMP)
Figure 9. Turn–Off Time
Motorola Bipolar Power Transistor Device Data
3