MJ15004 데이터 시트보기 (PDF) - ON Semiconductor

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MJ15004

Complementary Silicon Power Transistors

ON Semiconductor 

MJ15003 (NPN), MJ15004 (PNP)

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Collector Emitter Sustaining Voltage (Note 1)

(IC = 200 mAdc, IB = 0)

Collector Cutoff Current

(VCE = 140 Vdc, VBE(off) = 1.5 Vdc)

(VCE = 140 Vdc, VBE(off) = 1.5 Vdc, TC = 150°C)

Collector Cutoff Current

(VCE = 140 Vdc, IB = 0)

Emitter Cutoff Current

(VEB = 5 Vdc, IC = 0)

SECOND BREAKDOWN

Second Breakdown Collector Current with Base Forward Biased

(VCE = 50 Vdc, t = 1 s (non repetitive))

(VCE = 100 Vdc, t = 1 s (non repetitive))

ON CHARACTERISTICS

DC Current Gain

(IC = 5 Adc, VCE = 2 Vdc)

Collector Emitter Saturation Voltage

(IC = 5 Adc, IB = 0.5 Adc)

Base Emitter On Voltage

(IC = 5 Adc, VCE = 2 Vdc)

DYNAMIC CHARACTERISTICS

Current Gain — Bandwidth Product

(IC = 0.5 Adc, VCE = 10 Vdc, ftest = 0.5 MHz)

Output Capacitance

(VCB = 10 Vdc, IE = 0, ftest = 1 MHz)

1. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2%.

Symbol

Min

Max

Unit

VCEO(sus)

ICEX

ICEO

IEBO

140

−

Vdc

−

100 mAdc

−

2

mAdc

−

250 mAdc

−

100 mAdc

IS/b

hFE

VCE(sat)

VBE(on)

Adc

5.0

−

1.0

−

25

150

−

−

1.0

Vdc

−

2.0

Vdc

fT

2.0

−

MHz

cob

−

1000

pF

TYPICAL CHARACTERISTICS MJ15003G (NPN)

100

150°C

25°C

−55°C

VCE = 2 V

10

0.1

1

10

100

IC, COLLECTOR CURRENT (A)

Figure 1. DC Current Gain

0.8

IC/IB = 10

0.7

150°C

0.6

25°C

0.5

−55°C

0.4

0.3

0.2

0.1

0

0.1

1

10

100

IC, COLLECTOR CURRENT (A)

Figure 2. Collector−Emitter Saturation Voltage

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