MH32S72APHB-6 데이터 시트보기 (PDF) - MITSUBISHI ELECTRIC

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MH32S72APHB-6

2,415,919,104-BIT (33,554,432 - WORD BY 72-BIT)Synchronous DRAM

MITSUBISHI ELECTRIC  

Preliminary Spec.

Some contents are subject to change without notice.

MITSUBISHI LSIs

MH32S72APHB -6,-7,-8

2,415,919,104-BIT (33,554,432 - WORD BY 72-BIT)Synchronous DRAM

ABSOLUTE M AXIMUM RATINGS

Symbol

Parameter

Condition

Ratings

Unit

Vdd

Supply Voltage

with respect to Vss -0.5 ~ 4.6

V

VI

Input Voltage

with respect to Vss -0.5 ~ Vdd+0.5 V

VO

Output Voltage

with respect to Vss -0.5 ~ Vdd+0.5 V

IO

Output Current

50

mA

Pd

Power Dissipation

Ta=25°C

18

W

Topr

Operating Temperature

0 ~ 70

°C

Ts tg

Storage Temperature

-40 ~ 100

°C

RECOM M ENDED OPERATING CONDITION

(Ta=0 ~ 70°C, unless otherwise noted)

Symbol

Parameter

Limits

Unit

Min.

Typ. Max.

Vdd

Supply Voltage

3.0

3.3

3.6

V

Vs s

Supply Voltage

0

0

0

V

VIH

High-Level Input Voltage all inputs 2.0

Vdd+0.3

V

VIL

Low-Level Input Voltage all inputs -0.3

0.8

V

Note)

1:VIH(max)=5.5V f or pulse width less than 10ns.

2.VIL(min)=-1.0 f or pulse width less than 10ns.

CAPACITANCE

(Ta=0 ~ 70°C, Vdd = 3.3 ± 0.3V, Vss = 0V, unless otherwise noted)

Symbol

Parameter

Test Condition Limits(max.) Unit

CI(A) Input Capacitance, address pin

105

pF

CI(C) Input Capacitance, /RAS,/CAS,/WE @1MHz

105

pF

1.4V bias

CI(K) Input Capacitance, CK pin

200mV swing

48

pF

CI/O Input Capacitance, I/O pin

MIT-DS-0380-0.1

MITSUBISHI

ELECTRIC

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22

pF

17.Mar.2000

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