MC74HC244A(2012) 데이터 시트보기 (PDF) - ON Semiconductor
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MC74HC244A Datasheet PDF : 9 Pages
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MC74HC244A
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
Symbol
VOL
Parameter
Maximum Low−Level Output
Voltage
Iin
Maximum Input Leakage Current
IOZ Maximum Three−State Leakage
Current
ICC Maximum Quiescent Supply Cur-
rent (per Package)
Test Conditions
Vin = VIL
|Iout| v 20 mA
Vin = VIL |Iout| v 2.4 mA
|Iout| v 6.0 mA
|Iout| v 7.8 mA
Vin = VCC or GND
Output in High−Impedance State
Vin = VIL or VIH
Vout = VCC or GND
Vin = VCC or GND
Iout = 0 mA
Guaranteed Limit
VCC – 55 to
V
25_C v 85_C v 125_C Unit
2.0
0.1
0.1
0.1
V
4.5
0.1
0.1
0.1
6.0
0.1
0.1
0.1
3.0
0.26
0.33
0.4
4.5
0.26
0.33
0.4
6.0
0.26
0.33
0.4
6.0
± 0.1
± 1.0
± 1.0
mA
6.0
± 0.5
± 5.0
± 10
mA
6.0
4.0
40
160
mA
AC ELECTRICAL CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6 ns)
Symbol
tPLH,
tPHL
Parameter
Maximum Propagation Delay, A to YA or B to YB
(Figures 1 and 3)
tPLZ,
tPHZ
Maximum Propagation Delay, Output Enable to YA or YB
(Figures 2 and 4)
tPZL,
tPZH
Maximum Propagation Delay, Output Enable to YA or YB
(Figures 2 and 4)
tTLH,
tTHL
Maximum Output Transition Time, Any Output
(Figures 1 and 3)
Cin Maximum Input Capacitance
Cout Maximum Three−State Output Capacitance
(Output in High−Impedance State)
Guaranteed Limit
VCC – 55 to
V
25_C
v85_C v125_C Unit
2.0
96
3.0
50
4.5
18
6.0
15
115
135
ns
60
70
23
27
20
23
2.0
110
140
165
ns
3.0
60
70
80
4.5
22
28
33
6.0
19
24
28
2.0
110
140
165
ns
3.0
60
70
80
4.5
22
28
33
6.0
19
24
28
2.0
60
75
90
ns
3.0
23
27
32
4.5
12
15
18
6.0
10
13
15
−
10
10
10
pF
−
15
15
15
pF
Typical @ 25°C, VCC = 5.0 V
CPD Power Dissipation Capacitance (Per Buffer)*
34
pF
* Used to determine the no−load dynamic power consumption: PD = CPD VCC2f + ICC VCC.
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