MBR3045C 데이터 시트보기 (PDF) - BCD Semiconductor

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MBR3045C

HIGH EFFICIENCY POWER SCHOTTKY RECTIFIER

BCD Semiconductor 

HIGH EFFICIENCY POWER SCHOTTKY RECTIFIER

Absolute Maximum Ratings (Each Diode Leg) (Note 1)

Parameter

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

Average Rectified Forward Current

(Rated VR) TC=126oC

Peak Repetitive Forward Current

(Rated VR, Square Wave, 20kHz) TC=138oC

Non Repetitive Peak Surge Current (Surge Applied at Rated

Load Conditions Half Wave, Single Phase, 60Hz)

Operating Junction Temperature (Note 2)

Storage Temperature Range

Voltage Rate of Change (Rated VR)

ESD (Machine Model=C)

ESD (Human Body Model=3B)

Symbol

VRRM

VRWM

VR

IF(AV)

IFRM

IFSM

TJ

TSTG

dv/dt

Data Sheet

MBR3045C

Value

Unit

45

V

15

30

200

150

-65 to 150

10000

400

8000

A

A

A

oC

oC

V/µs

V

V

Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.

These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated

under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods

may affect device reliability.

Note 2: The heat generated must be less than the thermal conductivity from Junction to Ambient: dPD/dTJ < 1/θJA.

Thermal Characteristics

Parameter

Symbol

θJC

Maximum Thermal Resistance

θJA

Condition

Junction to Case

TO-220-3/

TO-220-3 (2)

TO-220F-3

Junction to Ambient

TO-220-3/

TO-220-3 (2)

Value

3.0

2.0

60

Unit

oC/W

Mar. 2011 Rev. 1. 1

BCD Semiconductor Manufacturing Limited

4

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