2N4427 데이터 시트보기 (PDF) - Philips Electronics

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2N4427

Silicon planar epitaxial overlay transistors

Philips Electronics 

Philips Semiconductors

Silicon planar epitaxial

overlay transistors

Product specification

2N3866; 2N4427

CHARACTERISTICS

Tj = 25 °C unless otherwise specified.

SYMBOL

PARAMETER

CONDITIONS

V(BR)CBO

V(BR)CEO

V(BR)CER

V(BR)EBO

VCEsat

ICEO

hFE

fT

Cc

collector-base breakdown voltage

2N3866

2N4427

collector-emitter breakdown voltage

2N3866

2N4427

collector-emitter breakdown voltage

2N3866

2N4427

emitter-base breakdown voltage

2N3866

2N4427

collector-emitter saturation voltage

2N3866

2N4427

collector leakage current

2N3866

2N4427

DC current gain

2N3866

2N3866

2N4427

2N4427

transition frequency

collector capacitance

2N3866

2N4427

open emitter; IC = 100 µA

open base; IC = 5 mA

RBE = 10 Ω; IC = 5 mA

open collector; IE = 100 µA

IC = 100 mA; IB = 20 mA

open base; VCE = 28 V

open base; VCE = 12 V

IC = 50 mA; VCE = 5 V

IC = 360 mA; VCE = 5 V

IC = 100 mA; VCE = 5 V

IC = 360 mA; VCE = 5 V

IC = 50 mA; VCE = 15 V; f = 200 MHz

VCB = 28 V; IE = Ie = 0; f = 1 MHz

VCB = 12 V; IE = Ie = 0; f = 1 MHz

MIN. MAX. UNIT

55

−

V

40

−

V

30

−

V

20

−

V

55

−

V

40

−

V

3.5 −

V

2

−

V

−

1

V

−

0.5 V

−

20

µA

−

20

µA

10

200

5

−

10

200

5

−

500 −

MHz

−

3

pF

−

4

pF

APPLICATION INFORMATION

Table 1 RF performance at Tmb = 25 °C.

TYPE

f

VCE

Po

Gp

IC

η

NUMBER

(MHz)

(V)

(W)

(dB)

(mA)

(%)

2N3866

100

28

1.8

>10

<107

>60

250

28

1.5

>10

<107

>50

400

28

1.0

>10

<79

>45

2N4427

175

12

1.0

>10

<167

>50

470

12

0.4

>10

67

50

1995 Oct 27

5

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