2N4427 데이터 시트보기 (PDF) - Philips Electronics

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2N4427

Silicon planar epitaxial overlay transistors

Philips Electronics 

Philips Semiconductors

Silicon planar epitaxial

overlay transistors

Product specification

2N3866; 2N4427

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

VCBO

VCER

VCEO

VEBO

IC

IC(AV)

ICM

Ptot

Tstg

Tj

collector-base voltage

2N3866

2N4427

collector-emitter voltage

2N3866

2N4427

collector-emitter voltage

2N3866

2N4427

emitter-base voltage

2N3866

2N4427

collector current (DC)

average collector current

collector current peak value

total power dissipation

storage temperature

junction temperature

open emitter

RBE = 10 Ω

open base

open collector

measured over any 20 ms

period

up to Tmb = 25 °C

MIN.

MAX.

UNIT

−

55

V

−

40

V

−

55

V

−

40

V

−

30

V

−

20

V

−

3.5

V

−

2.0

V

−

0.4

A

−

0.4

A

−

0.4

A

−

3.5

W

−65

+200

°C

−

200

°C

THERMAL CHARACTERISTICS

SYMBOL

Rth j-a

Rth j-mb

Rth mb-h

PARAMETER

thermal resistance from junction

to ambient in free air

thermal resistance from junction

to mounting base

thermal resistance from

mounting base to heatsink

note 1

note 2

CONDITIONS

VALUE

200

50

1.0

2.5

Notes

1. Mounted with top clamping washer 56218.

2. Mounted with top clamping washer 56218 and a boron nitride washer for electrical insulation.

UNIT

K/W

K/W

K/W

K/W

1995 Oct 27

3

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