MT28S4M16B1LLFG-10 데이터 시트보기 (PDF) - Micron Technology
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MT28S4M16B1LLFG-10 Datasheet PDF : 58 Pages
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64Mb: x16, x32
SYNCFLASH MEMORY
TRUTH TABLE 2b – SOFTWARE COMMAND SEQUENCES (SCS) (continued)
(Notes: 1, 2, 4, 5; see notes on page 16)
OPERATION
FIRST
CYCLE
UNPROTECT BLOCK/CONFIRM10, 16
Command
Active
ADDR =
X
Bank Address =
X
DQ =
X
RP#5 =
H
UNPROTECT DEVICE/CONFIRM
Command
Active
ADDR =
X
Bank Address =
X
DQ =
X
RP#5 =
H
ERASE NVMODE REGISTER
Command
Active
ADDR =
X
Bank Address =
X
DQ =
X
RP# =
H
PROGRAM NVMODE REGISTER18
Command
Active
ADDR =
X
Bank Address =
X
DQ =
X
RP# =
H
DISABLE HARDWARE LCR19
Command
Active
ADDR =
X
Bank Address =
X
DQ =
X
RP# =
H
CHIP INITIALIZE
Command
Active
ADDR =
X
Bank Address =
X
DQ =
X
RP# =
H
SECOND
CYCLE
THIRD
CYCLE
FOURTH
CYCLE
FIFTH
CYCLE
SIXTH
CYCLE
SEVENTH
CYCLE
EIGHTH
CYCLE
Write
55h
Bank12
X
H
Write
55h
Bank12
X
H
Write
55h
Bank12
X
H
Active
55h
Bank12
X
H
Active
55h
Bank12
X
H
Active
55h
Bank12
X
H
Write
2Ah
Bank12
55h
H
Write
2Ah
Bank12
55h
H
Write
2Ah
Bank12
55h
H
Active
80h
Bank12
X
H
Active
80h
Bank12
X
H
Active
80h
Bank12
X
H
Write
60h
Bank12
A0h
H
Write
60h
Bank12
A0h
H
Write
30h
Bank12
A0h
H
Active
X11
Bank12
X
H
Write
X
Bank12
LBDb(IN)16
VHH
Active
X
Bank12
X
H
Write
X
Bank12
LBDb(IN)16
H/VHH
Active
X
Bank12
X
H
Write
X
Bank12
C0h
H
Write
55h
Bank L12
X
H
Active
55h
Bank L12
X
H
Write
2Ah
Bank L12
55h
H
Active
80h
Bank L12
X
H
Write
A0h
Bank L12
A0h
H
Active
X
Bank L12
X
H
Write
X
Bank L12
X
H
Write
55
Bank U12
X
H
Active
55h
Bank U12
X
H
Write
2Ah
Bank U12
55h
H
Active
80h
Bank U12
X
H
Write
Active
Write
A0h
X
X
Bank U12,18 Bank U12,18 Bank U12,18
A0h
X
X
H
H
H
Write
55h
Bank12
X
H
Active
55h
Bank12
X
H
Write
2Ah
Bank12
55h
H
Active
80h
Bank12
X
H
Write
68h
Bank12
A0h
H
Active
X
Bank12
X
H
Write
X
Bank12
C0h
H
64Mb: x16, x32 SyncFlash
MT28S4M16B1LL.p65 – Rev. 1, Pub. 5/02
15
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2002, Micron Technology, Inc.
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