Philips Semiconductors
RDS/RBDS demodulator
Product specification
SAA6581T
CHARACTERISTICS: DIGITAL PART
VDDA = VDDD = 5 V; Tamb = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
Supply
VDDD
IDDD
Ptot
Inputs
digital supply voltage
digital supply current
total power dissipation
VIL
LOW-level input voltage at
pins TCON, OSCI, SYNC and
MODE
VIH
HIGH-level input voltage at
pins TCON, OSCI, SYNC and
MODE
Ii(pu)
input pull-up current at
pins TCON and MODE
VIH = 3.5 V
Outputs
VOL
LOW-level output voltage at
IOL = 2 mA
pins QUAL, RDDA and RDCL
VOH
HIGH-level output voltage at
IOH = −0.02 mA
pins QUAL, RDDA and RDCL
Crystal parameters
fi(xtal)
∆fosc
∆fosc(T)
CL
Rxtal
crystal input frequency
adjustment tolerance of oscillator
frequency
temperature drift of oscillator
frequency
load capacitance
crystal resonance resistance
TCON = HIGH;
MODE = LOW
TCON = HIGH;
MODE = HIGH
Tamb = −40 to +85 °C
MIN. TYP.
4.0
5.0
−
1.5
−
30
−
−
0.7VDDD −
−10
−20
−
−
4.0
−
−
4.332
−
8.664
−
−
−
−
−
30
−
−
MAX.
UNIT
5.5
V
−
mA
−
mW
0.3VDDD V
−
V
−
µA
0.4
V
−
V
−
MHz
−
MHz
30 × 10−6
30 × 10−6
−
pF
120
Ω
2001 May 07
6