KSC5031 데이터 시트보기 (PDF) - Inchange Semiconductor
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KSC5031 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
KSC5031
DESCRIPTION
·High Breakdown Voltage-
: V(BR)CBO= 1100V(Min)
·Fast Switching speed
·Wide Area of Safe Operation
·High Reliability
APPLICATIONS
·Designed for switching regulator Applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1100
V
VCEO
Collector-Emitter Voltage
800
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
8
A
ICM
Collector Current-Peak
25
A
IBB
Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperature Range
4
A
140
W
150
℃
-55~150
℃
isc Website：www.iscsemi.cn
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