JCS740B 데이터 시트보기 (PDF) - Jilin Sino-Microelectronics
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JCS740B Datasheet PDF : 12 Pages
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特征曲线 ELECTRICAL CHARACTERISTICS (curves)
JCS740
On-Region Characteristics
VGS
Top 15V
10V
8V
7V
10
6.5V
6V
5.5V
Bottom 5V
Transfer Characteristics
10
150℃
1
25℃
Notes：
1. 250μs pulse test
2. TC=25℃
1
1
10
V DS [V]
On-Resistance Variation vs.
Drain Current and Gate Voltage
Notes：
1.250μs pulse test
2.VDS=40V
0.1
2
4
6
8
10
V GS [V]
Body Diode Forward Voltage Variation
vs. Source Current and Temperature
1.05
1.00
VGS=10V
0.95
0.90
VGS=20V
0.85
0.80
Note ：Tj=25℃
0.75
0
1
2
3
4
5
6
7
8
I D [A]
Capacitance Characteristics
Ciss=Cgs+Cgd(Cds=shorted)
3x103
Coss=Cds+Cgd
Crss=Cgd
2x103
1x103
0
10-1
100
101
V DS Drain-Source Voltage [V]
10
25℃
1
0.1
0.4
150℃
0.6
0.8
1.0
V SD [V]
Notes：
1. 250μs pulse test
2. VGS=0V
1.2
1.4
1.6
Gate Charge Characteristics
12
V =320V
DS
10
V =200V
DS
8
V =80V
DS
6
4
2
0
0
4
8
12
16
20
24
28
32
Q Toltal Gate Charge [nC]
g
版本：201008B
5/12
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