IXFK 180N15P
IXFX 180N15P
Fig. 7. Input Adm ittance
250
225
200
175
150
125
100
75
TJ = 150ºC
50
25ºC
-40ºC
25
0
4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 9
VG S - Volts
Fig. 9. Source Current vs.
Source-To-Drain Voltage
350
300
250
200
150
100
TJ = 150ºC
50
TJ = 25ºC
0
0. 3
0.5
0.7
0.9
1.1
1. 3
1.5
VS D - Volts
100,000
Fig. 11. Capacitance
f = 1MHz
Fig. 8. Transconductance
120
TJ = -40ºC
100
25ºC
150ºC
80
60
40
20
0
0 25 50 75 100 125 150 175 200 225 250
I D - Amperes
10
9
8
7
6
5
4
3
2
1
0
0
Fig. 10. Gate Charge
VDS = 75V
ID = 90A
IG = 10mA
25 50 75 100 125 150 175 200 225 250
Q G - nanoCoulombs
1000
Fig. 12. Forw ard-Bias
Safe Operating Area
10,000
1,000
Cis
Cos
Crs
100
0
5 10 15 20 25 30 35 40
VDS - Volts
RDS(on) Limit
25µs
100µs
100
1ms
10
1
TJ = 175ºC
TC = 25ºC
DC
10ms
10
100
VD S - Volts
1000
IXYS reserves the right to change limits, test conditions, and dimensions.