IXFV14N80PS 데이터 시트보기 (PDF) - IXYS CORPORATION
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IXFV14N80PS Datasheet PDF : 5 Pages
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IXFH 14N80P IXFQ 14N80P
IXFT 14N80P IXFV 14N80P IXFV 14N80PS
Fig. 7. Input Admittance
20
18
16
14
12
TJ = 125ºC
25ºC
10
- 40ºC
8
6
4
2
0
3.5
4
4.5
5
5.5
6
VGS - Volts
45
40
35
30
25
20
15
10
5
0
0.3
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
TJ = 125ºC
TJ = 25ºC
0.4 0.5 0.6 0.7 0.8 0.9
1
1.1
VSD - Volts
10,000
1,000
Fig. 11. Capacitance
f = 1 MHz
Ciss
Coss
100
Fig. 8. Transconductance
30
27
24
21
TJ = - 40ºC
18
25ºC
15
125ºC
12
9
6
3
0
0
2
4
6
8 10 12 14 16 18 20
ID - Amperes
Fig. 10. Gate Charge
10
9
VDS =400V
I D = 7A
8
I G = 10mA
7
6
5
4
3
2
1
0
0
10
20
30
40
50
60
QG - NanoCoulombs
1.000
Fig. 13. Maximum Transient Thermal
Resistance
0.100
Crss
10
0
5
10
15
20
25
30
35
40
VDS - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
0.010
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS REF: F_14N80P (6J) 5-02-06.xls
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