IS62C1024AL(2005) 데이터 시트보기 (PDF) - Integrated Silicon Solution
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IS62C1024AL Datasheet PDF : 11 Pages
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IS62C1024AL
IS65C1024AL
128K x 8 LOW POWER CMOS
STATIC RAM
ISSI®
JANUARY 2005
FEATURES
• High-speed access time: 35, 45 ns
• Low active power: 100 mW (typical)
• Low standby power: 20 µW (typical) CMOS
standby
• Output Enable (OE) and two Chip Enable
(CE1 and CE2) inputs for ease in applications
• Fully static operation: no clock or refresh
required
• TTL compatible inputs and outputs
• Single 5V (±10%) power supply
• Commercial, Industrial, and Automotive tem-
perature ranges available
• Standard Pin Configuration:
— 32-pin SOP/ 32-pin TSOP (Type 1)
• Lead free available
DESCRIPTION
The ISSI IS62C1024AL/IS65C1024AL is a low power, 131,072-
word by 8-bit CMOS static RAM. It is fabricated using high-
performance CMOS technology. This highly reliable pro-
cess coupled with innovative circuit design techniques,
yields higher performance and low power consumption
devices.
When CE1 is HIGH or CE2 is LOW (deselected), the device
assumes a standby mode at which the power dissipation
can be reduced by using CMOS input levels.
Easy memory expansion is provided by using two Chip
Enable inputs, CE1 and CE2. The active LOW Write Enable
(WE) controls both writing and reading of the memory.
FUNCTIONAL BLOCK DIAGRAM
A0-A16
VDD
GND
I/O0-I/O7
DECODER
128K x 8
MEMORY ARRAY
I/O
DATA
CIRCUIT
COLUMN I/O
CE1
CE2
OE
WE
CONTROL
CIRCUIT
Copyright © 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability
arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any
published information and before placing orders for products.
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
1
Rev. C
01/24/05
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