IS61SP25618-133TQ 데이터 시트보기 (PDF) - Integrated Silicon Solution

부품명

상세내역

제조사

IS61SP25618-133TQ

256K x 16, 256K x 18 SYNCHRONOUS PIPELINED STATIC RAM

Integrated Silicon Solution 

IS61SP25616

IS61SP25618

INTERLEAVED BURST ADDRESS TABLE (MODE = VCC or No Connect)

External Address

A1 A0

00

01

10

11

1st Burst Address

A1 A0

01

00

11

10

2nd Burst Address

A1 A0

10

11

00

01

3rd Burst Address

A1 A0

11

10

01

00

ISSI ®

LINEAR BURST ADDRESS TABLE (MODE = GND)

0,0

A1', A0' = 1,1

0,1

1,0

ABSOLUTE MAXIMUM RATINGS(1)

Symbol Parameter

Value

Unit

TBIAS

Temperature Under Bias

–40 to +85

°C

TSTG

Storage Temperature

–55 to +150

°C

PD

Power Dissipation

1.6

W

IOUT

Output Current (per I/O)

100

mA

VIN, VOUT Voltage Relative to GND for I/O Pins –0.5 to VCCQ + 0.3 V

VIN

Voltage Relative to GND for

for Address and Control Inputs

–0.5 to VCC + 0.5 V

VCC

Voltage on Vcc Supply Relatiive to GND –0.5 to 4.6

V

Notes:

1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause perma-

nent damage to the device. This is a stress rating only and functional operation of the device at

these or any other conditions above those indicated in the operational sections of this

specification is not implied. Exposure to absolute maximum rating conditions for extended

periods may affect reliability.

2. This device contains circuitry to protect the inputs against damage due to high static voltages

or electric fields; however, precautions may be taken to avoid application of any voltage higher

than maximum rated voltages to this high-impedance circuit.

3. This device contains circuitry that will ensure the output devices are in High-Z at power up.

6

Integrated Silicon Solution, Inc. — 1-800-379-4774

Rev. A

04/17/01

Share Link: