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전자부품 반도체 검색엔진( 무료 PDF 다운로드 ) - 데이터시트뱅크

IS41C16256 데이터 시트보기 (PDF) - Integrated Silicon Solution

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IS41C16256
ISSI
Integrated Silicon Solution 
IS41C16256 Datasheet PDF : 19 Pages
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IS41C16256
IS41LV16256
ISSI ®
ELECTRICAL CHARACTERISTICS(1)
(Recommended Operation Conditions unless otherwise noted.)
Symbol Parameter
Test Condition
Speed Min. Max. Unit
IIL
Input Leakage Current
Any input 0V VIN Vcc
Other inputs not under test = 0V
10 10 µA
IIO
Output Leakage Current
Output is disabled (Hi-Z)
0V VOUT Vcc
10 10 µA
VOH
Output High Voltage Level
IOH = 2.5 mA
2.4
V
VOL
Output Low Voltage Level
ICC1
Stand-by Current: TTL
IOL = +2.1 mA
0.4
V
RAS, LCAS, UCAS VIH Commercial 5V
Industrial 5V
Commercial 3V
Industrial 3V
3
mA
4
2
3
ICC2
Stand-by Current: CMOS
RAS, LCAS, UCAS VCC 0.2V
5V
3V
2
mA
1
ICC3
Operating Current:
RAS, LCAS, UCAS,
Random Read/Write(2,3,4)
Address Cycling, tRC = tRC (min.)
Average Power Supply Current
ICC4
Operating Current:
RAS = VIL, LCAS, UCAS,
EDO Page Mode(2,3,4)
Cycling tPC = tPC (min.)
Average Power Supply Current
-35 230 mA
-50 180
-60 170
-35 220 mA
-50 170
-60 160
ICC5
Refresh Current:
RAS-Only(2,3)
RAS Cycling, LCAS, UCAS VIH
tRC = tRC (min.)
Average Power Supply Current
-35 230 mA
-50 180
-60 170
ICC6
Refresh Current:
RAS, LCAS, UCAS Cycling
CBR(2,3,5)
tRC = tRC (min.)
Average Power Supply Current
-35 230 mA
-50 180
-60 170
Notes:
1. An initial pause of 200 µs is required after power-up followed by eight RAS refresh cycles (RAS-Only or CBR) before proper device
operation is assured. The eight RAS cycles wake-up should be repeated any time the tREF refresh requirement is exceeded.
2. Dependent on cycle rates.
3. Specified values are obtained with minimum cycle time and the output open.
4. Column-address is changed once each EDO page cycle.
5. Enables on-chip refresh and address counters.
6
Integrated Silicon Solution, Inc. 1-800-379-4774
Rev. J
06/29/00

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