IRG4BC30KD-SPBF(2004) 데이터 시트보기 (PDF) - International Rectifier

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IRG4BC30KD-SPBF
(Rev.:2004)

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

International Rectifier 

IRG4BC30KD-SPbF

5.0 RG = 2O3hΩm

T J = 150° C

VCC = 480V

4.0 VGE = 15V

3.0

2.0

1.0

0.0

0

8

16

24

32

40

I C , Collector-to-emitter Current (A)

Fig. 11 - Typical Switching Losses vs.

Collector-to-Emitter Current

100

100 VGE = 20V

T J = 112255°oCC

10

SAFE OPERATING AREA

1

1

10

100

1000

VCE , Collector-to-Emitter Voltage (V)

Fig. 12 - Turn-Off SOA

TJ = 150°C

10

TJ = 125°C

TJ = 25°C

1

0.4

0.8

1.2

1.6

2.0

2.4

Forward Voltage Drop - VFM (V)

Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current

6

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