IRG4BC30KD-SPBF(2004) 데이터 시트보기 (PDF) - International Rectifier
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IRG4BC30KD-SPBF
(Rev.:2004)
(Rev.:2004)
International Rectifier
IRG4BC30KD-SPBF Datasheet PDF : 10 Pages
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PD -95674
IRG4BC30KD-SPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST
SOFT RECOVERY DIODE
Features
High short circuit rating optimized for motor control,
tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V
Combines low conduction losses with high switching
speed
tighter parameter distribution and higher efficiency than
previous generations
IGBT co-packaged with HEXFREDTM ultrafast,
ultrasoft recovery antiparallel diodes
Lead-Free
C
G
E
n-channel
Short Circuit Rated
UltraFast IGBT
VCES = 600V
VCE(on) typ. = 2.21V
@VGE = 15V, IC = 16A
Benefits
Latest generation 4 IGBTs offer highest power
density motor controls possible
HEXFREDTM diodes optimized for performance with
IGBTs. Minimized recovery characteristic reduce noise,
EMI and switching losses
This part replaces the IRGBC30KD2-S and
IRGBC30MD2-S products
For hints see design tip 97003
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
tsc
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Thermal Resistance
RθJC
RθJC
RθCS
RθJA
Wt
www.irf.com
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient ( PCB Mounted,steady-state)
Weight
D 2 Pak
Max.
600
28
16
58
58
12
58
10
± 20
100
42
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbfin (1.1 Nm)
Typ.
0.5
1.44
Max.
1.2
2.5
40
Units
V
A
µs
V
W
°C
Units
°C/W
g
1
8/11/04
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