IRFR220TRLPBF 데이터 시트보기 (PDF) - Unspecified
부품명
상세내역
제조사
IRFR220TRLPBF Datasheet PDF : 7 Pages
| |||
IRFR220, IRFU220, SiHFR220, SiHFU220
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
200
VGS = 10 V
14
3.0
7.9
Single
0.80
D
DPAK
(TO-252)
IPAK
(TO-251)
G
S
N-Channel MOSFET
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Surface Mount (IRFR220/SiHFR220)
• Straight Lead (IRFU220/SiHFU220)
• Available in Tape and Reel
• Fast Switching
• Ease of Paralleling
• Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU/SiHFU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surcace mount applications.
ORDERING INFORMATION
Package
DPAK (TO-252)
Lead (Pb)-free
IRFR220PbF
SiHFR220-E3
SnPb
IRFR220
SiHFR220
Note
a. See device orientation.
DPAK (TO-252)
IRFR220TRLPbFa
SiHFR220TL-E3a
IRFR220TRLa
SiHFR220TLa
DPAK (TO-252)
IRFR220TRPbFa
SiHFR220T-E3a
IRFR220TRa
SiHFR220Ta
DPAK (TO-252)
IRFR220TRRPbFa
SiHFR220TR-E3a
IRFR220TRRa
SiHFR220TRa
IPAK (TO-251)
IRFU220PbF
SiHFU220-E3
IRFU220
SiHFU220
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta
Linear Derating Factor
Linear Derating Factor (PCB Mount)e
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)e
Peak Diode Recovery dV/dtc
VDS
VGS
VGS at 10 V
TC = 25 °C
TC = 100 °C
ID
IDM
TC = 25 °C
TA = 25 °C
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Notes
b. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
c. VDD = 50 V, starting TJ = 25 °C, L = 14 mH, RG = 25 Ω, IAS = 4.8 A (see fig. 12).
d. ISD ≤ 5.2 A, dI/dt ≤ 95 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.
e. 1.6 mm from case.
f. When mounted on 1" square PCB (FR-4 or G-10 material).
LIMIT
200
± 20
4.8
3.0
19
0.33
0.020
230
4.8
4.2
42
2.5
5.0
- 55 to + 150
260d
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
www.kersemi.com
1
Share Link: 