IRFH4251DTRPBF 데이터 시트보기 (PDF) - International Rectifier

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IRFH4251DTRPBF

HEXFET® Power MOSFET

International Rectifier 

Q1 - Control FET

1.6

ID = 30A

VGS = 4.5V

1.4

1.2

1.0

0.8

0.6

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ , Junction Temperature (°C)

Fig 13. Normalized On-Resistance vs. Temperature

1000

IRFH4251DPbF

Q2 - Synchronous FET

1.8

ID = 30A

1.6 VGS = 4.5V

1.4

1.2

1.0

0.8

0.6

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ , Junction Temperature (°C)

Fig 14. Normalized On-Resistance vs. Temperature

1000

100

TJ = 150°C

10

TJ = 25°C

VGS = 0V

1.0

0.4 0.5 0.6 0.7 0.8 0.9 1.0

VSD, Source-to-Drain Voltage (V)

Fig 15. Typical Source-Drain Diode Forward Voltage

10

ID = 30A

8

6

4

TJ = 125°C

2

TJ = 25°C

0

2 4 6 8 10 12 14 16 18 20

VGS, Gate -to -Source Voltage (V)

Fig 17. Typical On-Resistance vs. Gate Voltage

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100

TJ = 150°C

TJ = 25°C

10

VGS = 0V

1.0

0.2

0.4

0.6

0.8

1.0

VSD, Source-to-Drain Voltage (V)

Fig 16. Typical Source-Drain Diode Forward Voltage

2.0

ID = 30A

1.5

1.0

TJ = 125°C

0.5

TJ = 25°C

0.0

2 4 6 8 10 12 14 16 18 20

VGS, Gate -to -Source Voltage (V)

Fig 18. Typical On-Resistance vs. Gate Voltage

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May 20, 2014

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