IRFBC30S 데이터 시트보기 (PDF) - International Rectifier

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IRFBC30S

HEXFET® Power MOSFET

International Rectifier 

IRFBC30S/L

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter

V(BR)DSS Drain-to-Source Breakdown Voltage

∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient

RDS(on)

Static Drain-to-Source On-Resistance

VGS(th)

Gate Threshold Voltage

gfs

Forward Transconductance

IDSS

Drain-to-Source Leakage Current

IGSS

Qg

Qgs

Qgd

td(on)

tr

td(off)

tf

LS

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Internal Source Inductance

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Min. Typ. Max. Units

Conditions

600 ––– ––– V VGS = 0V, ID = 250µA

––– 0.62 ––– V/°C Reference to 25°C, ID =1mA…

––– ––– 2.2 Ω VGS =10V, ID =2.2A „

2.0 ––– 4.0 V VDS = VGS, ID = 250µA

2.5 ––– ––– S VDS = 50V, ID = 2.2A…

––– ––– 100 µA VDS = 600V, VGS = 0V

––– ––– 500

VDS = 480V, VGS = 0V, TJ = 125°C

––– ––– 100 nA VGS = 20V

––– ––– -100

VGS = -20V

––– ––– 31

ID = 3.6A

––– ––– 4.6

––– ––– 17

nC VDS = 360V

VGS = 10V, See Fig. 6 and 13 „…

––– 11 –––

VDD = 300V

––– 13 ––– ns ID = 3.6A

––– 35 –––

RG = 12Ω

––– 14 –––

RD =82Ω, See Fig. 10 „…

Between lead,

––– 7.5 ––– nH and center of die contact

––– 660 –––

VGS = 0V

––– 86 ––– pF VDS = 25V

––– 19 –––

ƒ = 1.0MHz, See Fig. 5…

Source-Drain Ratings and Characteristics

Parameter

IS

Continuous Source Current

(Body Diode)

ISM

Pulsed Source Current

(Body Diode) 

V SD

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

ton

Forward Turn-On Time

Min. Typ. Max. Units

Conditions

MOSFET symbol

D

––– ––– 3.6 A showing the

integral reverse

G

––– ––– 14

p-n junction diode.

S

––– ––– 1.6 V TJ = 25°C, IS =3.6A, VGS = 0V „

––– 370 810 ns TJ = 25°C, IF =3.6A

––– 2.0 4.2 µC di/dt = 100A/µs „…

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

‚ VDD =50V, starting TJ = 25°C, L =41mH

RG = 25Ω, IAS = 3.6A. (See Figure 12)

ƒ ISD ≤ 3.6A, di/dt ≤ 60A/µs, VDD ≤ V(BR)DSS,

TJ ≤ 150°C

„ Pulse width ≤ 3000µs; duty cycle ≤ 2%.

… Uses IRFBC30 data and test conditions

** When mounted on 1" square PCB (FR-4 or G-10 Material ).

For recommended footprint and soldering techniques refer to application note #AN-994.

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