IRF7106 데이터 시트보기 (PDF) - International Rectifier

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IRF7106

HEXFET® Power MOSFET

International Rectifier 

IRF7106

P-Channel

10

TJ = 150°C

100

OPERATION IN THIS AREA LIMITED

BY RDS(on)

TJ = 25°C

1

0.1

VGS = 0V A

0.0

1.0

2.0

3.0

-VSD , Source-to-Drain Voltage (V)

Fig 18. Typical Source-Drain Diode

Forward Voltage

10

1ms

10ms

1

100ms

TA = 25°C

TJ = 150°C

Single Pulse

0.1

0.1

1

A

10

100

-VDS , Drain-to-Source Voltage (V)

Fig 19. Maximum Safe Operating Area

2.5

2.0

1.5

1.0

0.5

0.0

A

25

50

75

100

125

150

TA , Ambient Temperature (°C)

Fig 20. Maximum Drain Current Vs.

Ambient Temperature

Fig 21a. Switching Time Test Circuit

Fig 21b. Switching Time Waveforms

Fig 22a. Gate Charge Test Circuit

Fig 22b. Basic Gate Charge Waveform

74

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