IRF530L 데이터 시트보기 (PDF) - International Rectifier
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IRF530L Datasheet PDF : 10 Pages
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IRF530NS/IRF530NL
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS
∆V(BR)DSS/∆TJ
RDS(on)
VGS(th)
gfs
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD
Internal Drain Inductance
LS
Internal Source Inductance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
EAS
Single Pulse Avalanche Energy
Min. Typ. Max.
100 ––– –––
––– 0.11 –––
––– ––– 90
2.0 ––– 4.0
12 ––– –––
––– ––– 25
––– ––– 250
––– ––– 100
––– ––– -100
––– ––– 37
––– ––– 7.2
––– ––– 11
––– 9.2 –––
––– 22 –––
––– 35 –––
––– 25 –––
––– 4.5 –––
––– 7.5 –––
––– 920 –––
––– 130 –––
––– 19 –––
––– 340
93
Units
V
V/°C
mΩ
V
S
µA
nA
nC
ns
nH
pF
mJ
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 9.0A
VDS = VGS, ID = 250µA
VDS = 50V, ID = 9.0A
VDS = 100V, VGS = 0V
VDS = 80V, VGS = 0V, TJ = 150°C
VGS = 20V
VGS = -20V
ID = 9.0A
VDS = 80V
VGS = 10V, See Fig. 6 and 13
VDD = 50V
ID = 9.0A
RG = 12Ω
VGS = 10V, See Fig. 10
Between lead,
D
6mm (0.25in.)
from package
G
and center of die contact
S
VGS = 0V
VDS = 25V
ƒ = 1.0MHz, See Fig. 5
IAS = 9.0A, L = 2.3mH
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
––– ––– 17
A showing the
integral reverse
G
––– ––– 60
p-n junction diode.
S
––– ––– 1.3 V TJ = 25°C, IS = 9.0A, VGS = 0V
––– 93 140 ns TJ = 25°C, IF = 9.0A
––– 320 480 nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
Starting TJ = 25°C, L = 2.3mH
RG = 25Ω, IAS = 9.0A, VGS=10V (See Figure 12)
ISD ≤ 9.0A, di/dt ≤ 410A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
Pulse width ≤ 400µs; duty cycle ≤ 2%.
This is a typical value at device destruction and represents
operation outside rated limits.
This is a calculated value limited to TJ = 175°C .
Uses IRF530N data and test conditions.
**When mounted on 1" square PCB (FR-4 or G-10 Material). For
recommended footprint and soldering techniques refer to
application note #AN-994
2
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