IPB016N06L3G 데이터 시트보기 (PDF) - Infineon Technologies
부품명
상세내역
제조사
IPB016N06L3G Datasheet PDF : 9 Pages
| |||
IPB016N06L3 G
13 Avalanche characteristics
I AS=f(t AV); R GS=25 Ω
parameter: T j(start)
1000
14 Typ. gate charge
V GS=f(Q gate); I D=100 A pulsed
parameter: V DD
12
100
10
8
150 °C
100 °C
25 °C
6
10
4
30 V
12 V
48 V
1
1
10
100
t AV [µs]
15 Drain-source breakdown voltage
V BR(DSS)=f(T j); I D=1 mA
2
1000
0
0
50 100 150 200 250 300
Q gate [nC]
16 Gate charge waveforms
65
V GS
Qg
60
V g s(th)
55
Q g(th)
50
-60
-20
20
60 100 140 180
T j [°C]
Q gs
Rev. 2.3
page 7
Q sw
Q gd
Q gate
2009-11-16
Share Link: 