IDT74ALVC08
3.3V CMOS QUADRUPLE 2-INPUT POSITIVE-AND GATE
INDUSTRIAL TEMPERATURE RANGE
ABSOLUTE MAXIMUM RATINGS(1)
Symbol
Description
Max
Unit
VTERM(2) Terminal Voltage with Respect to GND –0.5 to +4.6
V
VTERM(3) Terminal Voltage with Respect to GND –0.5 to VCC+0.5 V
TSTG Storage Temperature
–65 to +150
°C
IOUT
DC Output Current
–50 to +50
mA
IIK
Continuous Clamp Current,
VI < 0 or VI > VCC
±50
mA
IOK
Continuous Clamp Current, VO < 0
–50
mA
ICC
Continuous Current through each
ISS
VCC or GND
±100
mA
CAPACITANCE (TA = +25°C, F = 1.0MHz)
Symbol
Parameter(1)
Conditions Typ. Max. Unit
CIN
Input Capacitance
VIN = 0V
5
7
pF
COUT
Output Capacitance VOUT = 0V
7
9
pF
CI/O
I/O Port Capacitance VIN = 0V
7
9
pF
NOTE:
1. As applicable to the device type.
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation
of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
2. VCC terminals.
3. All terminals except VCC.
DC ELECTRICAL CHARACTERISTICS OVER OPERATING RANGE
Following Conditions Apply Unless Otherwise Specified:
Operating Condition: TA = –40°C to +85°C
Symbol
Parameter
Test Conditions
Min. Typ.(1)
Max.
Unit
VIH
Input HIGH Voltage Level
VCC = 2.3V to 2.7V
1.7
—
—
V
VCC = 2.7V to 3.6V
2
—
—
VIL
Input LOW Voltage Level
VCC = 2.3V to 2.7V
VCC = 2.7V to 3.6V
—
—
0.7
V
—
—
0.8
IIH
Input HIGH Current
VCC = 3.6V
VI = VCC
—
—
±5
µA
IIL
Input LOW Current
VIK
Clamp Diode Voltage
VCC = 3.6V
VCC = 2.3V, IIN = –18mA
VI = GND
—
—
±5
µA
—
–0.7
–1.2
V
VH
Input Hysteresis
VCC = 3.3V
ICCL
Quiescent Power Supply Current VCC = 3.6V
ICCH
VIN = GND or VCC
ICCZ
∆ICC
Quiescent Power Supply Current One input at VCC - 0.6V, other inputs at VCC or GND
Variation
—
100
—
mV
—
0.1
10
µA
—
—
750
µA
NOTE:
1. Typical values are at VCC = 3.3V, +25°C ambient.
2