IDT70V24L25PFG8 데이터 시트보기 (PDF) - Integrated Device Technology
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IDT70V24L25PFG8 Datasheet PDF : 25 Pages
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IDT70V35/34S/L (IDT70V25/24S/L)
High-Speed 3.3V 8/4K x 18 (8/4K x 16) Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
AC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range for 70V25/24(6)
70V25/24X15
Com'l Ony
70V25/24X20
Com'l
& Ind
70V25/24X25
Com'l
& Ind
Symbol
BUSY TIMING (M/S = VIH)
Parameter
Min. Max. Min. Max. Min. Max. Unit
tBAA
BUSY Access Time from Address Match
____
15
____
20
____
20
ns
tBDA
BUSY Disable Time from Address Not Matched
____
15
____
20
____
20
ns
tBAC
BUSY Access Time from Chip Enable LOW
____
15
____
20
____
20
ns
tBDC
BUSY Disable Time from Chip Enable HIGH
tAPS
Arbitration Priority Set-up Time(2)
____
15
____
17
____
17
ns
5
____
5
____
5
____
ns
tBDD
BUSY Disable to Valid Data(3)
tWH
Write Hold After BUSY(5)
BUSY TIMING (M/S = VIL)
____
18
____
30
____
30
ns
12
____
15
____
17
____
ns
tWB
BUSY Input to Write(4)
tWH
Write Hold After BUSY(5)
0
____
0
____
0
____
ns
12
____
15
____
17
____
ns
PORT-TO-PORT DELAY TIMING
tWDD
Write Pulse to Data Delay(1)
____
30
____
45
____
50
ns
tDDD
Write Data Valid to Read Data Delay(1)
____
25
____
35
____
35
ns
5624 tbl 13a
70V25/24X35
Com'l Only
70V25/24X55
Com'l Only
Symbol
BUSY TIMING (M/S = VIH)
Parameter
Min.
Max.
Min.
Max. Unit
tBAA
BUSY Access Time from Address Match
____
20
____
45
ns
tBDA
BUSY Disable Time from Address Not Matched
____
20
____
40
ns
tBAC
BUSY Access Time from Chip Enable LOW
____
20
____
40
ns
tBDC
BUSY Disable Time from Chip Enable HIGH
tAPS
Arbitration Priority Set-up Time(2)
____
20
____
35
ns
5
____
5
____
ns
tBDD
BUSY Disable to Valid Data(3)
tWH
Write Hold After BUSY(5)
BUSY TIMING (M/S = VIL)
____
35
____
40
ns
25
____
25
____
ns
tWB
BUSY Input to Write(4)
tWH
Write Hold After BUSY(5)
0
____
0
____
ns
25
____
25
____
ns
PORT-TO-PORT DELAY TIMING
tWDD
Write Pulse to Data Delay(1)
tDDD
Write Data Valid to Read Data Delay(1)
____
60
____
80
ns
____
45
____
65
ns
NOTES:
5624 tbl 13b
1. Port-to-port delay through SRAM cells from writing port to reading port, refer to "TIMING WAVEFORM OF WRITE PORT-TO-PORT READ AND
BUSY (M/S = VIH)".
2. To ensure that the earlier of the two ports wins.
3. tBDD is a calculated parameter and is the greater of 0, tWDD – tWP (actual) or tDDD – tDW (actual).
4. To ensure that the write cycle is inhibited during contention.
5. To ensure that a write cycle is completed after contention.
6. 'X' in part number indicates power rating (S or L).
61.472
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