HM514170C 데이터 시트보기 (PDF) - Hitachi -> Renesas Electronics
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HM514170C Datasheet PDF : 26 Pages
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HM514170C, HM51S4170C Series
AC Characteristics (Ta = 0 to +70°C, VCC = 5 V ± 10%, VSS = 0 V)*1, *14, *15, *17, *18
Test Conditions
Read, Write, Read-Modify-Write and Refresh Cycles (Common Parameters)
• Input rise and fall time: 5 ns
• Input timing reference levels: 0.8 V, 2.4 V
• Input levels: 0 V, 3 V
• Output load: 2 TTL gate + CL (100 pF) (Including scope and jig)
Parameter
Random read or write cycle time
RAS precharge time
RAS pulse width
CAS pulse width
Row address setup time
Row address hold time
Column address setup time
Column address hold time
RAS to CAS delay time
RAS to column address delay time
RAS hold time
CAS hold time
CAS to RAS precharge time
OE to Din delay time
OE delay time from Din
CAS setup time from Din
Transition time (rise and fall)
Refresh period
Refresh period (L-version)
HM514170C, HM51S4170C
-7
-8
Symbol Min Max Min Max Unit Notes
t RC
130 — 150 — ns
t RP
50 — 60 — ns
t RAS
70 10000 80 10000 ns
t CAS
20 10000 20 10000 ns 22
t ASR
0
—0
— ns
t RAH
10 —
10 —
ns
t ASC
0
—0
— ns
t CAH
15 —
15 —
ns
t RCD
20 50 20
60 ns 8
t RAD
15 35 15 40 ns 9
t RSH
20 —
20 —
ns
t CSH
70 —
80 —
ns
t CRP
15 —
15 —
ns 23
t ODD
20 —
20
—
ns
t DZO
0
—0
— ns
t DZC
0
—0
— ns
tT
3
50 3
50 ns 7
t REF
— 16 —
16 ms
t REF
— 128 —
128 ms
8
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