HM514170C 데이터 시트보기 (PDF) - Hitachi -> Renesas Electronics

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HM514170C

262,144-word × 16-bit Dynamic Random Access Memory

Hitachi -> Renesas Electronics 

HM514170C, HM51S4170C Series

Read-Modify-Write Cycle

Parameter

Read-modify-write cycle time

RAS to WE delay time

CAS to WE delay time

Column address to WE delay time

OE hold time from WE

HM514170C, HM51S4170C

-7

-8

Symbol Min Max Min Max

t RWC

180 —

200 —

t RWD

95

—

105 —

t CWD

45

—

45

—

t AWD

60 —

65

—

t OEH

20 —

20

—

Unit Notes

ns

ns 10, 19

ns 10, 19

ns 10, 19

ns 21

Refresh Cycle

Parameter

CAS setup time (CBR refresh cycle)

CAS hold time (CBR refresh cycle)

RAS precharge to CAS hold time

CAS precharge time in normal mode

HM514170C, HM51S4170C

-7

-8

Symbol Min Max Min Max

t CSR

10 —

10 —

t CHR

10 —

10

—

t RPC

10 —

10 —

t CPN

10 —

10 —

Unit Notes

ns 19

ns 20

ns 19

ns

Fast Page Mode Cycle

Parameter

Fast page mode cycle time

Fast page mode CAS precharge time

Fast page mode RAS pulse width

Access time from CAS precharge

RAS hold time from CAS precharge

Fast page mode read-modify-write cycle CAS

precharge to UWE, LWE delay time

Fast page mode read-modify-write cycle time

HM514170C, HM51S4170C

-7

-8

Symbol Min Max Min Max Unit Notes

t PC

45 —

50 —

ns

t CP

10 —

10 —

ns

t RASC

—

100000 —

100000 ns 12

t ACP

— 40

— 45

ns 3, 13

t RHCP

40

—

45 —

ns

t CPW

65 —

70 —

ns 21

t PCM

95 —

100 —

ns

10

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