HM5117400BTS-7 데이터 시트보기 (PDF) - Hitachi -> Renesas Electronics
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HM5117400BTS-7 Datasheet PDF : 25 Pages
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HM5117400B Series
DC Characteristics (Ta = 0 to +70 C, VCC = 5 V 10%, VSS = 0 V)
HM5117400B
-6
-7
-8
Parameter
Symbol Min
-only refresh current*2 ICC3
—
Standby current*1
I CC5
—
-before- refresh ICC6
—
current
Fast page mode current*1, *3 ICC7
—
Battery backup current
I CC10
—
Input leakage current
I LI
–10
Output leakage current ILO
–10
Max Min
110 —
5—
110 —
80 —
350 —
10 –10
10 –10
Max Min
100 —
5—
100 —
70 —
350 —
10 –10
10 –10
Max Unit Test Conditions
90 mA tRC = min
5 mA
= VIH,
= VIL
Dout = enable
90 mA tRC = min
65 mA
350 A
10 A
10 A
tPC = min
CMOS interface
Dout = High-Z
CBR refresh: tRC = 62.5 s
tRAS 0.3 s
0 V Vin 7 V
0 V Vout 7 V
Dout = disable
Output high voltage
VOH
2.4 VCC 2.4 VCC 2.4 VCC V
High Iout = –5 mA
Output low voltage
VOL
0 0.4 0 0.4 0 0.4 V Low Iout = 4.2 mA
Notes: 1. ICC depends on output load condition when the device is selected. ICC max is specified at the output
open condition.
2. Address can be changed once or less while
3. Address can be changed once or less while
= VIL.
= VIH.
Capacitance (Ta = 25 C, VCC = 5 V 10%)
Parameter
Symbol
Typ
Max
Unit
Notes
Input capacitance (Address)
CI1
Input capacitance (Clocks)
CI2
Output capacitance (Data-in, Data-out)
CI/O
—
5
—
7
—
7
pF
1
pF
1
pF
1, 2
Notes: 1. Capacitance measured with Boonton Meter or effective capacitance measuring method.
2.
= VIH to disable Dout.
6
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