HITK0203MP(2011) 데이터 시트보기 (PDF) - Renesas Electronics
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HITK0203MP Datasheet PDF : 7 Pages
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HITK0203MP
Main Characteristics
Maximum Channel Power
Dissipation Curve
1
0.8
0.6
0.4
0.2
0
0
50
100
150
Ambient Temperature Ta (°C)
*When using the glass epoxy board (FR-4: 40 × 40 × 1 mm)
10 V Typical Output Characteristics
5V
8
2.6 V
Pulse Test 2.4 V
Tc = 25°C
2.8 V
2.2 V
6
3V
2.0 V
4
1.8 V
1.6 V
2
1.4 V
VGS = 0 V
0
0
2
4
6
8
10
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics (2)
1
VDS = 10 V
Pulse Test
0.1
Tc = 75°C
0.01
25°C
0.001
–25°C
0.0001
0 0.5 1 1.5 2 2.5 3
Gate to Source Voltage VGS (V)
Preliminary
Maximum Safe Operation Area
100
Operation in this area
is limited by RDS(on)
10
1
0.1
DPCWOp=e1ra01t0i01omnmmsss
100 μs
Ta = 25°C
1 Shot Pulse
0.01
0.01
0.1
1
10
100
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics (1)
8
VDS = 10 V
Pulse Test
6
4
2 Tc = 75°C
25°C
–25°C
0
0
1
2
3
4
5
Gate to Source Voltage VGS (V)
Gate to Source Cutoff Voltage vs.
Case Temperature
1.5
VDS = 10 V
Pulse Test
1
ID = 10 mA
0.5
1 mA
0.1 mA
–025 0 25 50 75 100 125 150
Case Temperature Tc (°C)
R07DS0481EJ0100 Rev.1.00
Jun 22, 2011
Page 3 of 6
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