HD64F3029X25W 데이터 시트보기 (PDF) - Renesas Electronics
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HD64F3029X25W Datasheet PDF : 1010 Pages
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Item
21.1 Electrical Characteristics
of HD64F3029F25,
HD64F3029TE25
21.1.2 DC Characteristics
Table 21.2 DC Characteristics
Page
713
715, 716
Revision (See Manual for Details)
Title amended
Table and note amended
Item
Symbol Min
Current
Normal
dissipation*2 operation
ICC*3
—
Sleep mode
—
Module
—
standby mode
Standby mode
—
—
Flash memory
—
programming/
erasing*4
Analog power During A/D
AICC
—
supply current conversion
During A/D
—
and D/A
conversion
Idle
—
—
Typ
Max
20(3.3V) 38
Test
Unit Conditions
mA f = 25 MHz
17(3.3V) 35
16(3.3V) 34
mA f = 25 MHz
mA f = 25 MHz
15(3.3V) 70
—
100
30(3.3V) 48
0.6
1.5
µA
T
a
≤
50˚C
µA
50˚C
<
T
a
mA f = 25 MHz
(reference
values)
mA
0.6
1.5
mA
0.02(3.3V) 5.0
—
15
µA Ta ≤ 50˚C
at DASTE = 0
µA 50˚C < Ta
at DASTE = 0
Item
Reference
current
During A/D
conversion
During A/D
and D/A
conversion
Idle
RAM standby voltage
VCL output
Voltage*5
Normal
operation
VCC start
Voltage*6
V
CC
rise
rate*6
Symbol Min
AI
—
CC
—
—
V
3.0
RAM
VCL
1.5
VCC START
—
SV
CC
0.05
Typ Max
0.25 0.8
1.2 3.0
0.02 5.0
—
—
1.9 2.3
0
0.8
—
—
Test
Unit Conditions
mA
mA
µA DASTE = 0
V
V
VCC = 3.3V
Ta = 25˚C
V
V/ms
*3 ICC max. (normal operation)= 11 (mA) + 0.13
(mA/(MHz × V)) × VCC × f
ICC max. (sleep mode)= 11 (mA) + 0.11
(mA/(MHz × V)) × VCC × f
ICC max. (sleep mode + module standby mode) =
11 (mA) + 0.10 (mA/(MHz × V)) × VCC × f
Rev. 2.0, 06/04, page v of xxiv
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