MMBT4401 데이터 시트보기 (PDF) - ZOWIE Technology
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MMBT4401 Datasheet PDF : 6 Pages
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Zowie Technology Corporation
Switching Transistor
NPN Silicon
MMBT4401
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
3
1
2
SOT-23
Symbol
VCEO
VCBO
VEBO
IC
COLLECTOR
3
BASE
1
2
EMITTER
Value
40
60
6.0
600
Unit
Vdc
Vdc
Vdc
mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board(1) TA=25oC
Derate above 25oC
Thermal Resistance Junction to Ambient
Total Device Dissipation Alumina Substrate,(2) TA=25oC
Derate above 25oC
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
Symbol
PD
R JA
PD
R JA
TJ,TSTG
Max.
225
1.8
556
300
2.4
417
-55 to +150
Unit
mW
mW / oC
oC / W
mW
mW / oC
oC / W
oC
DEVICE MARKING
MMBT4401=2X
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted)
Characteristic
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdowe Voltage(3)
( IC=1.0mAdc, IB=0 )
V(BR)CEO
40
-
Vdc
Collector-Base Breakdowe Voltage
( IC=0.1 mAdc, IE=0 )
Emitter-Base Breakdowe Voltage
( IE=0.1 mAdc, IC=0 )
Base Cutoff Current
( VCE=35 Vdc, VEB=0.4 Vdc )
Collector Cutoff Current
( VCE=35 Vdc, VEB=0.4 Vdc )
V(BR)CBO
60
V(BR)EBO
6.0
IBEV
-
ICEX
-
-
Vdc
-
Vdc
0.1
nAdc
0.1
nAdc
REV. : 0
Zowie Technology Corporation
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