Die Characteristics
DIE DIMENSIONS:
65 x 52 x 19 mils ± 1 mils
1650 x 1310 x 483µm ± 25.4µm
METALLIZATION:
Type: Al, 1% Cu
Thickness: 16kÅ ± 2kÅ
GLASSIVATION:
Type: Nitride over Silox
Silox Thickness: 12kÅ ± 2kÅ
Nitride Thickness: 3.5kÅ ± 1.5kÅ
WORST CASE CURRENT DENSITY:
0.7 x 105 A/cm2 at 1.8mA
SUBSTRATE POTENTIAL (Powered Up): V-
TRANSISTOR COUNT: 34
PROCESS: Bipolar Dielectric Isolation
Metallization Mask Layout
HA-2850/883
HA-2850/883
V+
OUT
-IN
+IN
V-
Spec Number 511095-883
248