GA300TD60S 데이터 시트보기 (PDF) - Vishay Semiconductors
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GA300TD60S
Vishay Semiconductors
GA300TD60S Datasheet PDF : 8 Pages
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www.vishay.com
VS-GA300TD60S
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector to emitter breakdown voltage VBR(CES)
Collector to emitter voltage
VCE(on)
Gate threshold voltage
Collector to emitter leakage current
VGE(th)
ICES
Diode forward voltage drop
VFM
Gate to emitter leakage current
IGES
VGE = 0 V, IC = 500 μA
VGE = 15 V, IC = 150 A
VGE = 15 V, IC = 300 A
VGE = 15 V, IC = 150 A, TJ = 125 °C
VGE = 15 V, IC = 300 A, TJ = 125 °C
VCE = VGE, IC = 250 μA
VGE = 0 V, VCE = 600 V
VGE = 0 V, VCE = 600 V, TJ = 125 °C
IFM = 150 A
IFM = 300 A
IFM = 150 A, TJ = 125 °C
IFM = 300 A, TJ = 125 °C
VGE = ± 20 V
MIN.
600
-
-
-
-
2.9
-
-
-
-
-
-
-
TYP.
-
1.04
1.24
0.96
1.22
4.8
0.02
1.5
1.23
1.48
1.17
1.50
-
MAX.
-
1.15
1.45
1.06
1.42
6.3
0.75
10
1.39
1.75
1.33
1.77
± 200
UNITS
V
mA
V
nA
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Reverse bias safe operating area
Eon
Eoff
Etot
Eon
Eoff
Etot
td(on)
tr
td(off)
tf
RBSOA
IC = 300 A, VCC = 360 V, VGE = 15 V,
Rg = 1.5 , L = 500 μH, TJ = 25 °C
IC = 300 A, VCC = 360 V, VGE = 15 V,
Rg = 1.5 , L = 500 μH, TJ = 125 °C
TJ = 150 °C, IC = 800 A, VCC = 400 V
VP = 600 V, Rg = 22 VGE = 15 V to 0 V,
L = 500 μH
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
trr
Irr
Qrr
IF = 300 A, dIF/dt = 500 A/μs,
VCC = 400 V, TJ = 25 °C
trr
Irr
Qrr
IF = 300 A, dIF/dt = 500 A/μs,
VCC = 400 V, TJ = 125 °C
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
9
90
99
23
133
156
442
301
406
1570
Fullsquare
150
43
3.9
236
64
8.6
MAX.
-
-
-
-
-
-
-
-
-
-
179
59
6.3
265
80
11.1
UNITS
mJ
ns
ns
A
μC
ns
A
μC
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Operating junction and storage temperature range
Junction to case per leg
IGBT
Diode
TJ, TStg
RthJC
Case to sink per module
case to heatsink: M6 screw
Mounting torque
case to terminal 1, 2, 3: M5 screw
RthCS
Weight
MIN.
-40
-
-
-
4
2
-
TYP.
-
-
-
0.05
-
-
270
MAX.
150
0.11
0.4
-
6
5
-
UNITS
°C
°C/W
Nm
g
Revision: 11-Dec-17
2
Document Number: 93362
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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