FZT7053TA(2009) 데이터 시트보기 (PDF) - Diodes Incorporated.

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FZT7053TA
(Rev.:2009)

100V NPN Darlington transistor in SOT223

Diodes Incorporated. 

A Product Line of

Diodes Incorporated

FZT7053

100V NPN Darlington transistor in SOT223

Maximum Ratings @TA = 25°C unless otherwise specified

Characteristic

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Peak Pulse Current

Symbol

VCBO

VCEO

VEBO

IC

ICM

Value

100

100

12

1.5

1.8

Unit

V

V

V

A

A

Thermal Characteristics

Characteristic

Power Dissipation at TA = 25°C (Note 1)

Linear derating factor

Power Dissipation at TA = 25°C (Note 2)

Linear derating factor

Power Dissipation at TA = 25°C (Note 3)

Linear derating factor

Thermal Resistance, Junction to Ambient (Note 1)

Thermal Resistance, Junction to Ambient (Note 2)

Thermal Resistance, Junction to Lead (Note 3)

Operating and Storage Temperature Range

Symbol

PD

PD

PD

RθJA

RθJA

RθJL

TJ, TSTG

Value

1.0

8.0

1.25

10

6.25

50

125

100

20

-55 to +150

Unit

W

mW /°C

W

mW /°C

W

mW /°C

°C/W

°C/W

°C/W

°C

Notes:

1. For a device surface mounted on 15mm X 15mm X 1.6mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions

2. Mounted on 25mm X 25mm X 1.6mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions.

3. Junction to lead (collector Tab). Typical.

Electrical Characteristics @TA = 25°C unless otherwise specified

Characteristic

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage (Note 4)

Emitter-Base Breakdown Voltage

Collector-Base Cutoff Current

Collector-Emitter Cutoff Current

Emitter Cutoff Current

DC Current Gain (Note 4)

Collector-Emitter Saturation Voltage (Note 4)

Base-Emitter Turn-On Voltage (Note 4)

Output Capacitance (Note 4)

Current Gain-Bandwidth Product (Note 4)

Turn-On Time

Turn-Off Time

Symbol

V(BR)CBO

V(BR)CEO

V(BR)EBO

ICBO

ICES

IEBO

hFE

VCE(SAT)

VBE(ON)

Cobo

fT

ton

toff

Min Typ Max

100

100

12

<1

100

0.5

<1

200

0.5

<1

100

10000

1000

1.5

2.0

6.0

8.0

200

0.7

2.5

Unit

V

V

V

nA

µA

nA

µA

nA

V

mV

pF

MHz

µs

µs

Test Condition

IC = 100µA

IC = 100mA

IE = 100µA

VCB = 80V

VCB = 80V, Tamb = 100°C

VCB = 80V

VCB = 80V, Tamb = 100°C

VEB = 7V

IC = 100mA, VCE = 5V

IC = 1A, VCE = 5V

IC = 100mA, IB = 0.1mA

IC = 100mA, VCE = 5V

VCB = 10V. f = 1MHz

VCE = 5V, IC = 100mA

VCC = 10V, IC = 100µA

IB1 = -IB2 = 0.1mA

Notes:

1. For a device surface mounted on 15mm X 15mm X 1.6mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions

2. Mounted on 25mm X 25mm X 1.6mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions.

3. Junction to lead (collector Tab). Typical.

4. Measured under pulsed conditions. Pulse width = 300 µs. Duty cycle ≤ 2%

FZT7053

Document Number DS31895 Rev. 2 - 2

2 of 5

www.diodes.com

August 2009

© Diodes Incorporated

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