FS30KMJ-06F-A8 데이터 시트보기 (PDF) - Renesas Electronics

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FS30KMJ-06F-A8

High-Speed Switching Use Nch Power MOS FET

Renesas Electronics 

FS30KMJ-06F

High-Speed Switching Use

Nch Power MOS FET

Features

• Drive voltage : 4 V

• VDSS : 60 V

• rDS(ON) (max) : 22 mΩ

• ID : 30 A

• Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 50 ns

Outline

TO-220FN

2

1

12 3

3

Applications

Motor control, lamp control, solenoid control, DC-DC converters, etc.

Maximum Ratings

Parameter

Drain-source voltage

Gate-source voltage

Drain current

Drain current (Pulsed)

Avalanche current (Pulsed)

Source current

Source current (Pulsed)

Maximum power dissipation

Channel temperature

Storage temperature

Isolation voltage

Mass

Symbol

VDSS

VGSS

ID

IDM

IDA

IS

ISM

PD

Tch

Tstg

Viso

—

Ratings

60

±20

30

120

30

30

120

25

– 55 to +150

– 55 to +150

2000

2.0

REJ03G0254-0100

Rev.1.00

Aug.20.2004

1. Gate

2. Drain

3. Source

(Tc = 25°C)

Unit

Conditions

V

VGS = 0 V

V

VDS = 0 V

A

A

A

L = 10 µH

A

A

W

°C

°C

V

AC 1 minute,

Terminal to case

g

Typical value

Rev.1.00, Aug.20.2004, page 1 of 6

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