FS10AS-06-T13 데이터 시트보기 (PDF) - Renesas Electronics
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FS10AS-06-T13 Datasheet PDF : 7 Pages
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FS10AS-06
Transfer Characteristics (Typical)
40
Tc = 25°C
VDS = 10V
32
Pulse Test
24
16
8
0
0
4
8
12 16 20
Gate-Source Voltage VGS (V)
Capacitance vs.
Drain-Source Voltage (Typical)
104
7
Tch = 25°C
5
f = 1MHz
3
VGS = 0V
2
103
7
Ciss
5
3
2
102
Coss
7
5
3
Crss
2
101
3 5 7100 2 3 5 7 101 2 3 5 7 102 2 3
Drain-Source Voltage VDS (V)
Gate-Source Voltage vs.
Gate Charge (Typical)
20
Tch = 25°C
ID = 10A
16
12
VDS = 10V
8
20V
40V
4
0
0
4
8
12 16 20
Gate Charge Qg (nC)
Rev.1.00, Aug.20.2004, page 4 of 6
Forward Transfer Admittance vs.
Drain Current (Typical)
102
7
5
4
3
2
Tc = 25°C
VDS = 5V
Pulse Test
101
7
5
4
75°C
3
125°C
2
100
100 2 3 4 5 7 101 2 3 4 5 7 102
Drain Current ID (A)
Switching Characteristics (Typical)
102
7
5
4
tf
td(off)
3
2
td(on)
tr
101
7
5
4
3 Tch = 25°C
2
VDD = 30V
VGS = 10V
RGEN = RGS = 50Ω
100
100 2 3 4 5 7 101
2 3 4 5 7 102
Drain Current ID (A)
Source-Drain Diode Forward
Characteristics (Typical)
40
VGS = 0V
Pulse Test
32
24
Tc = 125°C
75°C
16
25°C
8
0
0 0.4 0.8 1.2 1.6 2.0
Source-Drain Voltage VSD (V)
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