Ordering number : ENA1126A
FH105A
SANYO Semiconductors
DATA SHEET
FH105A
NPN Epitaxial Planar Silicon Composite Transistor
High-Frequency Low-Noise Amplifier,
Differential Amplifier Applications
Features
• Composite type with 2 transistors contained in the MCP package currently in use, improving the mounting
efficiency greatly
• The FH105A is formed with two chips, being equivalent to the 2SC5245A, placed in one package
• Optimal for differential amplification due to excellent thermal equilibrium and pair capability
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Dissipation
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
PT
Tj
Tstg
Conditions
When mounted on ceramic substrate (250mm2×0.8mm) 1unit
When mounted on ceramic substrate (250mm2×0.8mm)
Ratings
Unit
20
V
10
V
1.5
V
30 mA
150 mW
300 mW
150
°C
--55 to +150
°C
Package Dimensions
unit : mm (typ)
7026A-005
2.0
654
0.15
FH105A-TR-E
0 to 0.08
12
0.65
3
0.3
1 : Collector1
2 : Base2
3 : Collector2
4 : Emitter2
5 : Emitter1
6 : Base1
SANYO : MCP6
Product & Package Information
• Package
: MCP6
• JEITA, JEDEC
: SC-88, SC-70-6, SOT-363
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TR
Marking
1
1
TR
LOT No.
105
LOT No.
Electrical Connection
B1 E1 E2
Tr1
Tr2
C1 B2 C2
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