FDPF10N60NZ 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FDPF10N60NZ Datasheet PDF : 10 Pages
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Typical Performance Characteristics
Figure 1. On-Region Characteristics
30
VGS = 15.0V
10.0V
8.0V
7.0V
10
6.0V
5.5V
1
0.5
0.5
*Notes:
1. 250s Pulse Test
2. TC = 25oC
1
10
VDS, Drain-Source Voltage[V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
1.0
0.9
0.8
0.7
0.6
0.5
0
VGS = 10V
VGS = 20V
*Note: TC = 25oC
5
10
15
20
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
4000
Ciss
1000
Coss
100
Crss
10
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
*Note:
1. VGS = 0V
Crss = Cgd
2. f = 1MHz
1
10-1
1
10
30
VDS, Drain-Source Voltage [V]
Figure 2. Transfer Characteristics
100
10
1
0.1
2
150oC
25oC
-55oC
*Notes:
1. VDS = 20V
2. 250s Pulse Test
4
6
8
10
VGS, Gate-Source Voltage[V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
100
10
150oC
25oC
1
0.1
0.2
*Notes:
1. VGS = 0V
2. 250s Pulse Test
0.4 0.6 0.8 1.0 1.2 1.4
VSD, Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
10
8
VDS = 120V
VDS = 300V
VDS = 480V
6
4
2
*Note: ID = 10A
0
0
5
10
15
20
25
Qg, Total Gate Charge [nC]
©2010 Fairchild Semiconductor Corporation
FDP10N60NZ / FDPF10N60NZ Rev. C0
3
www.fairchildsemi.com
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