FDB14AN06LA0 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FDB14AN06LA0 Datasheet PDF : 11 Pages
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Typical Characteristics TC = 25°C unless otherwise noted
1.4
VGS = VDS, ID = 250µA
1.2
1.0
0.8
0.6
0.4
0.2
-80
-40
0
40
80
120 160 200
TJ, JUNCTION TEMPERATURE (oC)
Figure 11. Normalized Gate Threshold Voltage vs
Junction Temperature
1.2
ID = 250µA
1.1
1.0
0.9
-80
-40
0
40
80
120 160 200
TJ, JUNCTION TEMPERATURE (oC)
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
5000
1000
CRSS = CGD
CISS = CGS + CGD
COSS ≅ CDS + CGD
10
VDD = 30V
8
6
4
100
VGS = 0V, f = 1MHz
50
0.1
1
10
60
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 13. Capacitance vs Drain to Source
Voltage
2
0
0
WAVEFORMS IN
DESCENDING ORDER:
ID = 60A
ID = 10A
10
20
30
40
50
Qg, GATE CHARGE (nC)
Figure 14. Gate Charge Waveforms for Constant
Gate Currents
©2004 Fairchild Semiconductor Corporation
FDB14AN06LA0 / FDP14AN06LA0 Rev. B
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