FDP7030BLS 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FDP7030BLS Datasheet PDF : 6 Pages
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Typical Characteristics (continued)
SyncFET Schottky Body Diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode in
parallel with PowerTrench MOSFET. This diode exhibits
similar characteristics to a discrete external Schottky
diode in parallel with a MOSFET. Figure 12
FDP7030BLS.
Time: 10ns/div
Figure 12. FDP7030BLS SyncFET body
diode reverse recovery characteristic.
For comparison purposes, Figure 13 shows the reverse
recovery characteristics of the body diode of an
equivalent size MOSFET produced without SyncFET
(FDP7030BL).
Schottky barrier diodes exhibit significant leakage at
high temperature and high reverse voltage. This will
increase the power in the device.
Figure 14. SyncFET diode reverse leakage
versus drain-source voltage and
temperature.
0.1
0.01
T A = 100oC
0.001
0.0001
TA = 25oC
0.00001
0
10
20
30
VDS, REVERSE VOLTAGE (V)
Figure 13. Non-SyncFET (FDP7030BL) body
diode reverse recovery characteristic.
Time: 10ns/div
FDP7030BLS Rev B(W)
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