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FDD5N50U 데이터 시트보기 (PDF) - Fairchild Semiconductor

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FDD5N50U Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
April 2013
FDD5N50U
N-Channel UniFETTM Ultra FRFETTM MOSFET
500 V, 3 A, 2.0
Features
• RDS(on) = 1.65 (Typ.) @ VGS = 10 V, ID = 1.5 A
• Low gate charge (Typ. 11 nC)
• Low Crss (Typ. 5 pF)
• 100% avalanche tested
• RoHS compliant
Applications
• LCD/LED/PDP TV
• Lighting
• Uninterruptible Power Supply
Description
UniFETTM MOSFET is Fairchild Semiconductor®’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche
energy strength. UniFETTM Ultra FRFETTM MOSFET has much
superior body diode reverse recovery performance. Its trr is less
than 50nsec and the reverse dv/dt immunity is 20V/nsec while
normal planar MOSFETs have over 200nsec and 4.5V/nsec
respectively. Therefore UniFET Ultra FRFET MOSFET can
remove additional component and improve system reliability in
certain applications that require performance improvement of the
MOSFET’s body diode. This device family is suitable for switch-
ing power converter applications such as power factor correction
(PFC), flat panel display (FPD) TV power, ATX and electronic
lamp ballasts.
D
D
G
G
S
D-PAK
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
RJC
RJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
S
FDD5N50U
500
±30
3
1.8
12
275
3
4
4.5
40
0.3
-55 to +150
300
FDD5N50U
1.4
110
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
Unit
oC/W
©2007 Fairchild Semiconductor Corporation
1
FDD5N50U Rev. C0
www.fairchildsemi.com

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