FCX495 데이터 시트보기 (PDF) - Diodes Incorporated.

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FCX495

150V NPN MEDIUM POWER TRANSISTOR IN SOT89

Diodes Incorporated. 

Electrical Characteristics (@TA = 25°C, unless otherwise specified.)

Characteristic

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage (Note 7)

Emitter-Base Breakdown Voltage

Collector Cut-Off Current

Emitter Cut-Off Current

Emitter Cut-Off Current

DC Current Transfer Static Ratio (Note 7)

Collector-Emitter Saturation Voltage (Note 7)

Base-Emitter Saturation Voltage (Note 7)

Base-Emitter Turn-On Voltage (Note 7)

Symbol

BVCBO

BVCEO

BVEBO

ICBO

IEBO

ICES

hFE

VCE(sat)

VBE(sat)

VBE(on)

Min

Typ

Max

170

—

—

150

—

—

7

—

—

—

—

100

—

—

100

—

—

100

100

—

100

—

300

50

—

—

10

—

—

—

—

—

0.2

0.3

—

—

1.0

—

—

1.0

Transitional Frequency

fT

100

—

-

Output Capacitance

Cobo

—

—

10

Note:

7. Measured under pulsed conditions. Pulse width ≤ 300μs. Duty cycle ≤ 2%.

FCX495

Unit

V

V

V

nA

nA

nA

—

—

—

—

V

V

V

MHz

pF

Test Condition

IC = 100µA

IC = 1mA

IE = 100µA

VCB = 150V

VEB = 5.6V

VCE = 150V

IC = 1mA, VCE = 10V

IC = 250mA, VCE = 10V

IC = 500mA, VCE = 10V

IC = 1A, VCE = 10V

IC = 250mA, IB = 25mA

IC = 500mA, IB = 50mA

IC = 500mA, IB = 50mA

IC = 500mA, VCE = 10V

IC = 50mA, VCE = 10V

f = 100MHz

VCB = 10V, f = 1MHz,

FCX495

Datasheet Number: DS33057 Rev. 7 - 2

3 of 6

www.diodes.com

September 2015

© Diodes Incorporated

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