EDS2516APTA 데이터 시트보기 (PDF) - Elpida Memory, Inc

부품명

상세내역

제조사

EDS2516APTA

256M bits SDRAM

Elpida Memory, Inc 

EDS2516APTA

DC Characteristics 2 (TA = 0 to +70°C, VDD, VDDQ = 3.3V ± 0.3V, VSS, VSSQ = 0V)

Parameter

Symbol min.

max.

Unit Test condition

Note

Input leakage current

ILI

–1

1

µA 0 ≤ VIN ≤ VDD

Output leakage current

ILO

–1.5

1.5

µA 0 ≤ VOUT ≤ VDD, DQ = disable

Output high voltage

VOH

2.4

—

V

IOH = –4 mA

Output low voltage

VOL

—

0.4

V

IOL = 4 mA

Pin Capacitance (TA = 25°C, VDD, VDDQ = 3.3V ± 0.3V)

Parameter

Symbol Pins

min.

Typ

max.

Unit

Input capacitance

CI1

CLK

2.5

—

3.5

pF

E CI2

Address, CKE, /CS, /RAS,

/CAS, /WE, UDQM and LDQM

2.5

—

Data input/output capacitance CI/O DQ

4

—

3.8

pF

6.5

pF

Notes: 1. Capacitance measured with Boonton Meter or effective capacitance measuring method.

O2. Measurement condition: f = 1MHz, 1.4V bias, 200mV swing.

3. UDQM and LDQM = VIH to disable DOUT.

L4. This parameter is sampled and not 100% tested.

Notes

1, 2, 4

1, 2, 4

1, 2, 3, 4

Product

Data Sheet E0359E20 (Ver. 2.0)

6

Share Link: