ED1702P 데이터 시트보기 (PDF) - Philips Electronics
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ED1702P Datasheet PDF : 8 Pages
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Philips Semiconductors
NPN general purpose transistor
Product specification
ED1702
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
200
UNIT
K/W
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector cut-off current
IEBO
emitter cut-off current
hFE
DC current gain
hFE
VCEsat
Cc
fT
DC current gain
ED1702L
ED1702M
ED1702N
ED1702O
ED1702P
collector-emitter saturation voltage
collector capacitance
transition frequency
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
CONDITIONS
IE = 0; VCB = 20 V
IE = 0; VCB = 20 V; Tj = 150 °C
IC = 0; VEB = 5 V
IC = 500 mA; VCE = 1 V
IC = 100 mA; VCE = 1 V
IC = 100 mA; VCE = 1 V
IC = 500 mA; IB = 50 mA; note 1
IE = ie = 0; VCB = 10 V; f = 1 MHz
IC = 10 mA; VCE = 5 V; f = 100 MHz
MIN.
−
−
−
40
132
132
170
213
263
333
−
−
80
MAX.
100
5
500
−
476
UNIT
nA
µA
nA
189
233
300
370
476
700
mV
6
pF
−
MHz
1999 Apr 27
3
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