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전자부품 반도체 검색엔진( 무료 PDF 다운로드 ) - 데이터시트뱅크

CY7C1484V25 데이터 시트보기 (PDF) - Cypress Semiconductor

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CY7C1484V25
Cypress
Cypress Semiconductor 
CY7C1484V25 Datasheet PDF : 26 Pages
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CY7C1484V25
CY7C1485V25
Truth Table
The truth table for CY7C1484V25/CY7C1485V25 follows.[3, 4, 5, 6, 7]
Operation
Deselect Cycle, Power Down
Deselect Cycle, Power Down
Deselect Cycle, Power Down
Deselect Cycle, Power Down
Deselect Cycle, Power Down
Sleep Mode, Power Down
Read Cycle, Begin Burst
Read Cycle, Begin Burst
Write Cycle, Begin Burst
Read Cycle, Begin Burst
Read Cycle, Begin Burst
Read Cycle, Continue Burst
Read Cycle, Continue Burst
Read Cycle, Continue Burst
Read Cycle, Continue Burst
Write Cycle, Continue Burst
Write Cycle, Continue Burst
Read Cycle, Suspend Burst
Read Cycle, Suspend Burst
Read Cycle, Suspend Burst
Read Cycle, Suspend Burst
Write Cycle, Suspend Burst
Write Cycle, Suspend Burst
Add. Used CE1 CE2 CE3 ZZ ADSP ADSC ADV WRITE OE CLK DQ
None
H X XL X
L
X
X
X L-H Tri-State
None
L L XL L
X
X
X
X L-H Tri-State
None
L X HL L
X
X
X
X L-H Tri-State
None
L L XL H
L
X
X
X L-H Tri-State
None
L X HL H
L
X
X
X L-H Tri-State
None
X X XH X
X
X
X
X X Tri-State
External L H L L L
X
X
X
L L-H Q
External L H L L L
X
X
X
H L-H Tri-State
External L H L L H
L
X
L
X L-H D
External L H L L H
L
X
H
L L-H Q
External L H L L H
L
X
H H L-H Tri-State
Next
X X XL H
H
L
H
L L-H Q
Next
X X XL H
H
L
H H L-H Tri-State
Next
H X XL X
H
L
H
L L-H Q
Next
H X XL X
H
L
H H L-H Tri-State
Next
X X XL H
H
L
L
X L-H D
Next
H X XL X
H
L
L
X L-H D
Current X X X L H
H
H
H
L L-H Q
Current X X X L H
H
H
H
H L-H Tri-State
Current H X X L X
H
H
H
L L-H Q
Current H X X L X
H
H
H
H L-H Tri-State
Current X X X L H
H
H
L
X L-H D
Current H X X L X
H
H
L
X L-H D
Notes
3. X = “Don't Care.” H = Logic HIGH, L = Logic LOW.
4. WRITE = L when any one or more Byte Write Enable signals and BWE = L or GW = L. WRITE = H when all Byte Write Enable signals, BWE, GW = H.
5. The DQ pins are controlled by the current cycle and the OE signal. OE is asynchronous and is not sampled with the clock.
6. The SRAM always initiates a read cycle when ADSP is asserted, regardless of the state of GW, BWE, or BWX. Writes may occur only on subsequent clocks after
the ADSP or with the assertion of ADSC. As a result, OE must be driven HIGH prior to the start of the write cycle to allow the outputs to tri-state. OE is a don't
care for the remainder of the write cycle.
7. OE is asynchronous and is not sampled with the clock rise. It is masked internally during write cycles. During a read cycle all data bits are tri-state when OE is
inactive or when the device is deselected, and all data bits behave as output when OE is active (LOW).
Document #: 38-05286 Rev. *H
Page 8 of 26
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