CY14B101Q1A 데이터 시트보기 (PDF) - Cypress Semiconductor

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CY14B101Q1A

1-Mbit (128 K × 8) Serial (SPI) nvSRAM

Cypress Semiconductor 

CY14C101Q

CY14B101Q, CY14E101Q

Maximum Ratings

Exceeding maximum ratings may shorten the useful life of the

device. These user guidelines are not tested.

Storage temperature ................................ –65 C to +150 C

Maximum accumulated storage time

At 150 C ambient temperature ....................... 1000 h

At 85 C ambient temperature ..................... 20 Years

Ambient temperature with

power applied ........................................... –55 C to +150 C

Supply voltage on VCC relative to VSS

CY14C101Q: VCC = 2.4 V to 2.6 V ....–0.5 V to +3.1 V

CY14B101Q: VCC = 2.7 V to 3.6 V ....–0.5 V to +4.1 V

CY14E101Q: VCC = 4.5 V to 5.5 V ....–0.5 V to +7.0 V

DC voltage applied to outputs

in High Z state ..................................... –0.5 V to VCC + 0.5 V

Input voltage ........................................ –0.5 V to VCC + 0.5 V

DC Electrical Characteristics

Transient voltage (< 20 ns) on

any pin to ground potential .................. –2.0 V to VCC + 2.0 V

Package power dissipation

capability (TA = 25 °C) .................................................. 1.0 W

Surface mount lead soldering

temperature (3 seconds) .......................................... +260 C

DC output current (1 output at a time, 1s duration) ..... 15 mA

Static discharge voltage.......................................... > 2001 V

(per MIL-STD-883, Method 3015)

Latch up current..................................................... > 140 mA

Table 9. Operating Range

Device

CY14C101Q

CY14B101Q

CY14E101Q

Range

Ambient

Temperature

VCC

Industrial –40 C to +85 C 2.4 V to 2.6 V

2.7 V to 3.6 V

4.5 V to 5.5 V

Parameter

Description

Test Conditions

Min Typ[4] Max Unit

VCC

Power supply

CY14C101Q 2.4

2.5

2.6

V

CY14B101Q 2.7

3.0

3.6

V

CY14E101Q 4.5

5.0

5.5

V

ICC1

Average VCC current fSCK = 40 MHz; Values obtained without CY14C101Q

–

–

3

mA

output loads (IOUT = 0 mA)

CY14B101Q

CY14E101Q

–

–

4

mA

fSCK = 104 MHz; Values obtained without output loads

–

–

10

mA

(IOUT = 0 mA)

ICC2

Average VCC current All inputs don’t care, VCC = Max

during STORE

Average current for duration tSTORE

–

–

2

mA

ICC3

Average VCC current All inputs cycling at CMOS levels.

fSCK = 1 MHz;

Values obtained without output loads (IOUT = 0 mA)

VCC = VCC (Typ), 25 °C

–

–

1

mA

ICC4

Average VCAP current All inputs don't care. Average current for duration tSTORE –

–

3

mA

during AutoStore cycle

ISB

VCC standby current CS > (VCC – 0.2 V). VIN < 0.2 V or > (VCC – 0.2 V).

–

–

150

A

Standby current level after nonvolatile cycle is complete.

Inputs are static. fSCK = 0 MHz.

IZZ

Sleep mode current tSLEEP time after SLEEP Instruction is registered. All

–

–

8

A

inputs are static and configured at CMOS logic level.

IIX[5]

Input leakage current

(except HSB)

–1

–

+1

A

Input leakage current

(for HSB)

–100

–

+1

A

Notes

4. Typical values are at 25 °C, VCC = VCC (Typ). Not 100% tested.

5. The HSB pin has IOUT = -2 µA for VOH of 2.4 V when both active high and LOW drivers are disabled. When they are enabled standard VOH and VOL are valid. This

parameter is characterized but not tested.

Document #: 001-54393 Rev. *F

Page 21 of 34

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