Philips Semiconductors
High-voltage soft-recovery
controlled avalanche rectifiers
Product specification
BYX101G; BYX102G;
BYX103G; BYX104G
SYMBOL
PARAMETER
PRSM
non-repetitive peak reverse power
dissipation
Tstg
storage temperature
Tj
junction temperature
ELECTRICAL CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
VF
forward voltage
BYX101G
BYX102G
BYX103G
BYX104G
forward voltage
BYX101G
BYX102G
BYX103G
BYX104G
IR
reverse current
trr
reverse recovery time
BYX101G
BYX102G
BYX103G
BYX104G
CONDITIONS
t = 10 µs; triangular pulse;
Tj = Tj max prior to surge
MIN. MAX. UNIT
−
4
kW
−65
+175 °C
−65
+175 °C
CONDITIONS
IF = 1 A; Tj = 165 °C
IF = 1 A
VR = VRWmax
VR = VRWmax; Tj = 165 °C
when switched from IF = 50 mA to
IR = 100 mA; measured at IR = 25 mA
MAX. UNIT
17.5 V
19.5 V
22.5 V
31
V
20.5 V
23.9 V
29.7 V
52
V
15
µA
50
µA
600
ns
350
ns
175
ns
50
ns
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-oil
thermal resistance from junction to oil
note 1
Note
1. For more information please refer to the “General Part of associated Handbook”.
VALUE UNIT
20
K/W
2000 Jan 13
3