BYD11G 데이터 시트보기 (PDF) - Philips Electronics
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BYD11G Datasheet PDF : 7 Pages
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Philips Semiconductors
Controlled avalanche rectifiers
Product specification
BYD11 series
SYMBOL
PARAMETER
IF(AV)
average forward current
IFSM
non-repetitive peak forward current
PRSM
Tstg
Tj
non-repetitive peak reverse power
dissipation
storage temperature
junction temperature
CONDITIONS
Ttp = 55 °C;
lead length = 10 mm;
averaged over any 20 ms
period; see Figs 2 and 4
Tamb = 60 °C; PCB mounting
(see Fig.9);
averaged over any 20 ms
period; see Figs 3 and 4
t = 10 ms half sinewave;
Tj = Tj max prior to surge;
VR = VRRMmax
t = 20 µs half sinewave;
Tj = Tj max prior to surge
see Fig.5
MIN.
−
MAX. UNIT
0.50 A
−
0.37 A
−
10 A
−
200 W
−65 +175 °C
−65 +175 °C
ELECTRICAL CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VFtzt
V(BR)R
IR
trr
Cd
forward voltage
IF = 0.5 A; Tj = Tj max; see Fig.6
IF = 0.5 A; see Fig.6
reverse avalanche
breakdown voltage
IR = 0.1 mA
BYD11D
BYD11G
BYD11J
BYD11K
BYD11M
reverse current
VR = VRRMmax; see Fig.7
VR = VRRMmax; Tj = 165 °C; see Fig.7
reverse recovery time when switched from IF = 0.5 A to IR = 1 A;
measured at IR = 0.25 A; see Fig.10
diode capacitance VR = 0 V; f = 1 MHz; see Fig.8
MIN.
−
−
225
450
650
900
1 100
−
−
−
−
TYP.
−
−
−
−
−
−
−
−
−
3
14
MAX.
0.91
1.06
UNIT
V
V
−V
−V
−V
−V
−V
1
µA
75
µA
− µs
− pF
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE UNIT
Rth j-tp
Rth j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
lead length = 10 mm
note 1
180
K/W
250
K/W
Note
1. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper ≥40 µm, see Fig.9.
For more information please refer to the “General Part of associated Handbook”.
1996 Sep 26
3
Not recommended for new designs
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