BSX63-10 데이터 시트보기 (PDF) - Philips Electronics

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BSX63-10

NPN switching transistors

Philips Electronics 

Philips Semiconductors

NPN switching transistors

Product specification

BSX62; BSX63

FEATURES

• High current (max. 3 A)

• Low voltage (max. 60 V).

APPLICATIONS

• Medium power switching.

DESCRIPTION

NPN switching transistor in a TO-39 metal package.

PINNING

PIN

1

2

3

DESCRIPTION

emitter

base

collector, connected to case

handbook, halfpag1e

2

3

3

2

1

MAM317

Fig.1 Simplified outline (TO-39) and symbol.

QUICK REFERENCE DATA

SYMBOL

PARAMETER

VCBO

collector-base voltage

BSX62

BSX63

VCEO

collector-emitter voltage

BSX62

BSX63

IC

collector current (DC)

Ptot

total power dissipation

hFE

DC current gain

BSX62-10; BSX63-10

BSX62-16; BSX63-16

fT

transition frequency

toff

turn-off time

CONDITIONS

open emitter

open base

Tcase ≤ 25 °C

IC = 1 A; VCE = 1 V

IC = 200 mA; VCE = 10 V; f = 100 MHz

ICon = 1 A; IBon = 50 mA; IBoff = −50 mA

MIN. TYP. MAX. UNIT

−

−

60

V

−

−

80

V

−

−

40

V

−

−

60

V

−

−

3

A

−

−

5

W

63

100 160

100 160 250

30

70

−

MHz

−

−

1.5 µs

1997 Jun 19

2

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